Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

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This paper reports the comprehensive characterization of a Ge0.92Sn0.08/Ge0.86Sn0.14/Ge0.

92Sn0.08 single quantum well.By using a strain relaxed Ge0.92Sn0.08 buffer, the direct bandgap Ge0.

86Sn0.14 QW was Barware achieved, which is unattainable by using only a Ge buffer.Band structure calculations and Ironing Stations optical transition analysis revealed that the quantum well features type-I band alignment.The photoluminescence spectra showed dramatically increased quantum well peak intensity at lower temperature, confirming that the Ge0.86Sn0.

14 quantum well is a direct bandgap material.